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PD - 96227
IRFH3707PBF
Applications
l l l l
HEXFET(R) Power MOSFET
Synchronous Buck Converter for Computer Processor Power Isolated DC to DC Converters for Network and Telecom Buck Converters for Set-Top Boxes System/load switch
VDSS 30V
RDS(on) max Qg 12.4m:@VGS = 10V 5.4nC
Benefits
l l l l l l l
Low RDS(ON) Very Low Gate Charge Low Junction to PCB Thermal Resistance Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260C Reflow) RoHS compliant (Halogen Free)
D D D D
S S S G
3mm x 3mm PQFN
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 20 12 9.4 29 96 2.8 1.8 0.02 -55 to + 150
Units
V
A
g Power Dissipation g
Power Dissipation
c
W W/C C
Linear Derating Factor Operating Junction and
g
Storage Temperature Range
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case
f
Typ.
--- --- ---
Max.
7.5 45 31
Units
C/W
Junction-to-Ambient
gh
Junction-to-Ambient (t<10s)
h
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10
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02/12/09
IRFH3707PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 17 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.02 9.4 14.5 1.8 -6.2 --- --- --- --- --- 5.4 1.1 0.7 2.2 1.5 2.9 3.8 2.0 7.8 10.2 8.7 9.7 755 171 83 --- --- 12.4 V
Conditions
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 12A m VGS = 4.5V, ID = 9.4A 17.9 2.35 V VDS = VGS, ID = 25A --- mV/C 1.0 VDS = 24V, VGS = 0V A VDS = 24V, VGS = 0V, TJ = 125C 150 100 VGS = 20V nA -100 VGS = -20V --- S VDS = 15V, ID = 9.4A
e e
8.1 --- --- --- --- --- --- --- --- --- --- --- --- --- --- nC nC
VDS = 15V VGS = 4.5V ID = 9.4A See Fig.17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 9.4A RG=1.8 See Fig.15 VGS = 0V VDS = 15V = 1.0MHz
ns
pF
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current
d
Typ. --- ---
Max. 13 9.4
Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 20 27 3.5 A 96 1.0 30 41 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 9.4A, VGS = 0V TJ = 25C, IF = 9.4A, VDD = 15V di/dt = 200A/s
e
eA
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFH3707PBF
1000
TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V
1000
TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10 2.7V
1 2.7V Tj 60s PULSE WIDTH = 25C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
60s PULSE WIDTH
1 0.1 1 Tj = 150C 10 100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
1.8 ID = 12A VGS = 10V
ID, Drain-to-Source Current (A)
1.6
10
1.4 1.2
T J = 25C 1 TJ = 150C
1.0
VDS = 15V 60s PULSE WIDTH 0.1 1 2 3 4 5 6
0.8
0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFH3707PBF
10000
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
ID= 9.4A 12.0 10.0 8.0 6.0 4.0 2.0 0.0 VDS= 24V VDS= 15V
C, Capacitance (pF)
1000
Ciss
Coss 100 Crss
10 1 10 VDS, Drain-to-Source Voltage (V) 100
0
2
4
6
8
10
12
14
16
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100
ID, Drain-to-Source Current (A)
100 100sec 10
10
T = 150C J
TJ = 25C
1msec 1 T A = 25C Tj = 150C Single Pulse 0.1 10msec
1
VGS = 0V
0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V)
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFH3707PBF
12
VGS(th) , Gate Threshold Voltage (V)
2.5
10
ID, Drain Current (A)
2.0 ID = 25A 1.5
8 6
4
1.0
2
0 25 50 75 100 125 150 T A , Ambient Temperature (C)
0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
Thermal Response ( Z thJA ) C/W
D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01
0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 10 100 1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRFH3707PBF
RDS(on), Drain-to -Source On Resistance (m )
35
60
EAS , Single Pulse Avalanche Energy (mJ)
ID = 12A
30
50
25
ID 2.95A 3.63A BOTTOM 9.40A TOP
40
20 T J = 125C 15
30
20
10 T J = 25C 5 2 4 6 8 10 12 14 16 18 20
10
0 25 50 75 100 125 150 Starting T J , Junction Temperature (C)
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
V DS V GS
RD
VDS
L
DRIVER
RG V10V GS Pulse Width 1 s Duty Factor 0.1
D.U.T.
+
-V DD
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS tp
Fig 15a. Switching Time Test Circuit
VDS
90%
10%
VGS
I AS
td(on)
tr
td(off)
tf
Fig 14b. Unclamped Inductive Waveforms
Fig 15b. Switching Time Waveforms
6
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IRFH3707PBF
D.U.T
Driver Gate Drive Period D= P.W. Period VGS=10V
+
P.W.
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Current Regulator Same Type as D.U.T.
Id Vds Vgs
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Qgs1 Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 17. Gate Charge Test Circuit
Fig 18. Gate Charge Waveform
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IRFH3707PBF
PQFN Package Details
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFH3707PBF
PQFN Part Marking
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
IRFH3707PBF
Orderable part number IRFH3707TRPBF Package Type PQFN 3mm x 3mm Standard Pack Form Quantity Tape and Reel 4000 Note
Qualification information Qualification level Cons umer (per JE DE C JE S D47F PQFN 3mm x 3mm

guidelines ) MS L1
Moisture Sensitivity Level RoHS compliant
(per IPC/JE DE C J-S T D-020D Yes
)

Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.297mH, RG = 25, IAS = 9.4A. Pulse width 400s; duty cycle 2%. Rthjc is guaranteed by design. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Refer to application note #AN-994.
Data and specifications subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/2009
10
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